Memory Cells and Methods of Making Memory Cells

ABSTRACT

Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.

TECHNICAL FIELD

Memory cells and methods of making memory cells.

BACKGROUND

Memory is one type of integrated circuitry, and is used in systems forstoring data. Memory is usually fabricated in one or more arrays ofindividual memory cells. The memory cells are configured to retain orstore information in at least two different selectable states. In abinary system, the states are considered as either a “0” or a “1”. Inother systems, at least some individual memory cells may be configuredto store more than two levels or states of information.

Integrated circuit fabrication continues to strive to produce smallerand denser integrated circuits. Accordingly, there has been substantialinterest in memory cells that can be utilized in structures havingprogrammable material between a pair of electrodes; where theprogrammable material has two or more selectable resistive states toenable storing of information. Examples of such memory cells areresistive RAM (RRAM) cells, phase change RAM (PCRAM) cells, andprogrammable metallization cells (PMCs)—which may be alternativelyreferred to as a conductive bridging RAM (CBRAM) cells, nanobridgememory cells, or electrolyte memory cells. The memory cell types are notmutually exclusive. For example, RRAM may be considered to encompassPCRAM and PMCs.

An example prior art memory cell 5 is shown in FIG. 1 as transitioningbetween two memory states. One of the memory states is a high resistancestate (HRS) and the other is a low resistance state (LRS). The memorycell comprises a data storage region 7 between a pair of conductivestructures 1 and 3. The data storage region may comprise any of theprogrammable materials described above.

The memory cell is reversibly transitioned between HRS and LRS throughformation of a transitory structure 9 within the memory cell. Thetransitory structure may be a filament, conductive bridge, or any othersuitable structure which reduces resistance through the memory cell. Aportion of the conductive filament is shown to be present in the HRS,but in other applications there may be little or no portion of theconductive filament present in the HRS. Although the transitorystructure is shown as a single straight line, persons of ordinary skillin the art will recognize that the transitory structure may havenumerous configurations depending on the nature of the memory cell, andthe chemistry and physics involved in formation of the transitorystructure. For instance, the transitory structure may form throughdendritic growth, and thus may comprise one or more multi-branchingpaths. As another example, the transitory structure may comprise aregion of changed phase, altered vacancy concentration, altered ionconcentration (for instance, altered oxygen ion concentration), etc;which may or may not be part of a filament. If the transitory structurecomprises a filament, such filament may be continuous in some memorycells, and may have discontinuities in other memory cells.

The building blocks of the transitory structure may be atoms, ions,clusters, vacancies, etc., depending on the chemistry of the datastorage region of the memory cell. The transitory structure may directlyphysically contact the conductive structures on opposing sides of thetransitory structure. Alternatively, the transitory structure may bespaced from at least one of the conductive structures by a small gap,with such gap being narrow enough that charge “tunnels” the gap duringcurrent flow through the memory cell.

The memory cell 5 may be programmed by providing appropriate voltageacross the memory cell to either create the transitory structure 9, orto remove such transitory structure. The memory cell may be read byproviding suitable voltage across memory cell to determine a resistancethrough the memory cell, while limiting the voltage to a level whichdoes not cause programming of the memory cell.

Programmable memory cells of the type described in FIG. 1 may bescalable, and thus suitable for utilization in future generations ofmemory. However, problems are encountered in attempting to utilize suchmemory cells. For instance, some conventional memory cells are “leaky”in the memory states. FIG. 2 schematically depicts the LRS state ofmemory cell 5 as comprising a resistor 10 between the conductivestructures 1 and 3. Such resistor represents the resistance through thememory cell when the transitory structure 9 (FIG. 1) is present. Theresistance can be quite low, and the memory cell may be quite leaky.Accordingly, the memory cell 5 may be paired with a select device 12, asshown in FIG. 3, in order to better control current flow to and from thememory cell. The select device may be any of numerous devices,including, for example, a diode, a switch, a transistor, etc.

It is desired to develop improved memory cells, and improved methods offorming such memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 diagrammatically illustrates two interchangeable memory states ofa prior art memory cell.

FIGS. 2 and 3 schematically illustrate prior art memory cellconfigurations.

FIG. 4 schematically illustrates an example embodiment memory cellconfiguration.

FIGS. 5-7 diagrammatically illustrate example memory cell configurationsalongside schematic diagrams of the configurations.

FIGS. 8-10 diagrammatically illustrate additional example memory cellconfigurations.

FIGS. 11-13 are diagrammatic cross-sectional views of a memory cell atvarious process stages of an example embodiment method of forming amemory cell.

FIGS. 14 and 15 are diagrammatic cross-sectional views of exampleembodiment memory cells.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Some embodiments described herein include recognition that the leakageproblem of some conventional memory cells may be alleviated, or evenprevented, by increasing the resistance of the memory cells.

FIG. 4 schematically illustrates an example embodiment memory cell 20.The memory cell comprises two resistors 22 and 24 in series between theconductive structures 1 and 3. The resistor 22 may comprise lowresistance, and may be analogous to the resistor 10 described aboverelative to the prior art memory cell 5 of FIG. 2. The resistor 24represents a modification to memory cell which increases resistancethrough the memory cell relative to the prior art memory cell. Suchmodification may include any of numerous changes within one or morematerials of the memory cell, including, for example, changes incrystallinity, density, dopant concentration, etc.; as discussed belowwith reference to FIGS. 5-15.

The prior art memory cell 5 of FIG. 1 was shown to comprise a datastorage region 7. Such prior art memory cell operated through use of atransitory structure 9 which extended through the data storage region inthe LRS mode of the cell, and which may be fully or at least partiallyabsent in the HRS mode of the cell. In some embodiments, a memory cellmay be formed to have a data storage region with at least two physicallydifferent portions so that one of the portions supports a higherresistance segment of a transitory structure than another of theportions. In such embodiments, the resistor 24 of FIG. 4 may correspondto the resistance through the higher resistance segment of thetransitory structure, and the resistor 22 may correspond to theresistance through the lower resistance segment of the transitorystructure. The terms “higher resistance” and “lower resistance” areutilized to indicate resistance relative to one another, rather thanrelative to any external standard.

FIGS. 5-7 diagrammatically illustrate some example embodiment memorycells.

Referring to FIG. 5, a memory cell 20 a is shown to comprise atransitory structure 21 extending across the data storage region 7, andbetween the conductive structures 1 and 3. The transitory structure hasa lower resistance segment 22 a and a higher resistance segment 24 a.The higher resistance segment is illustrated to be wider than the lowerresistance segment, and such may be an accurate representation of someembodiments. However, the structure of FIG. 5 may also be considered tobe a generalized diagram that can encompass any transitory structurehaving the illustrated relationship in which one segment of thetransitory structure has a higher resistance than another.

In embodiments in which the lower resistance segment of the transitorystructure is actually a physically narrow part of a filament extendingacross data storage region 7, such lower resistance segment maycorrespond to a tip of the transitory structure which is the part of thetransitory structure nearest to the conductive structure 3. Such tip maydirectly contact a surface of conductive structure 3 in someembodiments, or may be spaced from the surface of the conductivestructure by a small gap that charge “tunnels” during current flowacross the data storage region. In some embodiments, the lowerresistance segment 22 a may have a resistance approaching a possibletheoretical minimum resistance of about 12.906 kilo-ohms.

The data storage region 7 has a thickness “T” between a surface of theconductive structure 1 and a surface of the conductive structure 3. Insome embodiments, the data storage region may comprise one or more metaloxides extending entirely across “T”. In some embodiments, the lowerresistance segment of the transitory structure 21 may extend a distanceof less than or equal to about one-fourth of “T”. For instance, in someembodiments “T” may be from about 5 nanometers to about 20 nanometers,and the lower resistance segment may extend a distance of less than orequal to about 4 nanometers.

A schematic diagram is provided on the right side of FIG. 5. Suchdiagram represents the higher resistance segment of transitory structure21 as a resistor 24 a, and represents the lower resistance segment as aresistor 22 a connected in series with the resistor 24 a.

FIG. 6 shows an example embodiment memory cell 20 b having a transitorystructure 25 extending across the data storage region 7, and between theconductive structures 1 and 3. The transitory structure has a higherresistance segment 24 b between a pair of lower resistance segments 22 band 30. The higher resistance segment is illustrated to be wider thanthe lower resistance segments, and such may be an accuraterepresentation of some embodiments. However, the structure of FIG. 6 mayalso be considered to be a generalized diagram that can encompass anytransitory structure having the illustrated relationship in which onesegment of the transitory structure has a higher resistance than a pairof other segments. The lower resistance segments 22 b and 30 may haveapproximately the same resistance as one another in some embodiments,and may have different resistances than one another in otherembodiments. In some embodiments, both of the lower resistance segments22 b and 30 may have resistances approaching about 12.906 kilo-ohms, andmay correspond to tips of the transitory structure 25 nearest theconductive structures 3 and 1, respectively.

In some embodiments, the transitory structure 25 of FIG. 6 may beconsidered to have a first lower resistance segment 22 b directlyagainst a surface of conductive structure 3, and to have a second lowerresistance segment 30 directly against a surface of conductive structure1. The transitory structure may also be considered to have a higherresistance segment 24 b which is not directly against surfaces of eitherof the conductive structures 1 and 3, but which is instead spaced fromsuch conductive structures by the lower resistance segments 22 b and 30.In some embodiments, the segments 22 b and 30 may be spaced fromsurfaces of conductive structures 3 and 1 by small gaps, even thoughsuch segments are the parts of the transitory structure closest to suchconductive structures, provided that charge can “tunnel” such gapsduring current flow along the transitory structure.

A schematic diagram is provided on the right side of FIG. 6. Suchdiagram represents the higher resistance segment of transitory structure25 as a resistor 24 b, and represents the lower resistance segments asresistors 22 b and 30. The resistors 22 b, 24 b and 30 are connected inseries.

FIG. 7 shows an example embodiment memory cell 20 c having a transitorystructure 27 extending across the data storage region 7, and between theconductive structures 1 and 3. The transitory structure has a lowerresistance segment 22 c between a pair of higher resistance segments 24c and 32. The higher resistance segments are illustrated to be widerthan the lower resistance segment, and such may be an accuraterepresentation of some embodiments. However, the structure of FIG. 6 mayalso be considered to be a generalized diagram that can encompass anytransitory structure having the illustrated relationship in which onesegment of the transitory structure has a lower resistance than a pairof other segments. The higher resistance segments 24 c and 32 may haveapproximately the same resistance as one another in some embodiments,and may have different resistances than one another in otherembodiments.

In some embodiments, the transitory structure 27 of FIG. 7 may beconsidered to have a first higher resistance segment 24 c directlyagainst a surface of conductive structure 3, and to have a second higherresistance segment 32 directly against a surface of conductive structure1. The transitory structure may also be considered to have a lowerresistance segment 22 c which is not directly against surfaces of eitherof the conductive structures 1 and 3, but which is instead spaced fromsuch conductive structures by the higher resistance segments 24 c and32. In some embodiments, the segments 24 c and 32 may be spaced fromsurfaces of conductive structures 3 and 1 by small gaps, even thoughsuch segments are the parts of the transitory structure closest to suchconductive structures, provided that charge can “tunnel” such gapsduring current flow along the transitory structure.

A schematic diagram is provided on the right side of FIG. 7. Suchdiagram represents the higher resistance segments of transitorystructure 27 as resistors 24 c and 32, and represents the lowerresistance segment as a resistor 22 c. The resistors 22 c, 24 c and 32are connected in series.

The constructions shown in FIGS. 5-7 are example constructions in whicha transitory structure comprises at least one lower resistance segmentand at least one higher resistance segment. Other embodiments maycomprise other arrangements of lower resistance segments and a higherresistance segments than shown in FIGS. 5-7, and in some embodiments maycomprise more than two lower resistance segments and/or more than twohigher resistance segments.

The shown embodiments of FIGS. 5-7 have abrupt transitions where thehigher resistance segments join to the lower resistance segments. Inother embodiments, the transitions between the lower resistance segmentsand the higher resistance segments may be more gradual. For instance,FIGS. 8-10 show example embodiment memory cells 20 d-f analogous to thememory cells 20 a-c, respectively, of FIGS. 5-7; but diagrammaticallyillustrate gradual transitions between the lower resistance segments andthe higher resistance segments of the transitory structures 21, 25 and27, rather than the abrupt transitions of FIGS. 5-7.

The memory cells of FIGS. 5-10 may be formed utilizing any suitableprocessing. FIGS. 11-13 describe an example method which may be utilizedto form the memory cell 20 a of FIG. 5.

FIG. 11 shows a construction 50 comprising a material 52 over theconductive structure 1. The material 52 is a first portion of a datastorage region 7. The material 52 may comprise any material suitable forutilization in the data storage region. For instance, the material 52may comprise a composition suitable for utilization in one or more ofPCRAM, RRAM, CBRAM, PMC, etc. In some embodiments, the material 52 maycomprise a metal oxide; and may, for example, comprise an oxidecontaining one or more of aluminum, antimony, barium, calcium, cesium,hafnium, iron, lanthanum, lead, magnesium, manganese, nickel,praseodymium, ruthenium, samarium, strontium, tantalum, tellurium,titanium, vanadium, yttrium and zirconium. In some embodiments, thematerial 52 may comprise multivalent metal oxide; and may, for example,comprise, consist essentially of, or consist of one or more of barium,ruthenium, strontium, titanium, calcium, manganese, praseodymium,lanthanum and samarium. In some embodiments, the material 52 maycomprise chalcogenide-type material (for instance, a material comprisinggermanium in combination with one or more of antimony, tellurium, sulfurand selenium).

In the shown embodiment, the material 52 is deposited directly onto asurface 53 of conductive structure 1.

The conductive structure 1 may comprise any suitable electricallyconductive material or combination of materials; and in some embodimentsmay comprise one or more of various metals (for instance, tungsten,titanium, copper, aluminum, etc.), metal-containing compositions (forinstance, metal silicides, metal carbide, etc.), and conductively-dopedsemiconductor materials (for instance, conductively-doped silicon,conductively-doped germanium, etc.).

The material 52 may be deposited utilizing any suitable methodology,including, for example, one or more of physical vapor deposition (PVD),chemical vapor deposition (CVD) and atomic layer deposition (ALD).

The conductive structure 1 may be supported over a semiconductorsubstrate, such as a monocrystalline silicon wafer comprising one ormore levels associated with integrated circuit fabrication. The terms“semiconductive substrate,” “semiconductor construction” and“semiconductor substrate” mean any construction comprising semiconductormaterial, including, but not limited to, bulk semiconductor materialssuch as a semiconductor wafer (either alone or in assemblies comprisingother materials), and semiconductor material layers (either alone or inassemblies comprising other materials). The term “substrate” refers toany supporting structure, including, but not limited to, thesemiconductor substrates described above.

Referring to FIG. 12, a material 54 is formed over material 52. A dashedline 55 is provided to diagrammatically illustrate an interface betweenmaterials 52 and 54. The material 54 corresponds to a second portion ofthe data storage region 7. Material 54 is physically different frommaterial 52. In some embodiments, materials 52 and 54 may have anidentical composition as one another, but may differ from one another interms of one or more of density, order and crystallinity. In suchembodiments, material 52 may be formed utilizing first depositionconditions, and material 54 may be formed utilizing second depositionconditions which differ from the first deposition conditions. Forinstance, material 52 may correspond to a first oxide depositedutilizing a first temperature and a first pressure, and material 54 maycorrespond to a second oxide deposited utilizing a second temperatureand a second pressure; with the second temperature being different fromthe first temperature and/or with the second pressure being differentfrom the first pressure. In some embodiments, the first and second metaloxides 52 and 54 may be identical in composition to one another, and maydiffer from one another only in one or more of density, order andcrystallinity. In other embodiments, the first and second metal oxides52 and 54 may be of different compositions relative to one another.

In an example embodiment, materials 52 and 54 may comprise, consistessentially of, or consist of an oxide comprising one or both of hafniumand zirconium. The material 54 may be formed utilizing a combination oftemperature and pressure so that such material has a relatively lowamount of disorder as compared to the material 52 which is formedutilizing a combination of temperature and pressure such that thematerial 52 has a relatively high amount of disorder. For instance,material 54 may be formed utilizing approximately atmospheric pressure,and a temperature of less than or equal to about 25° C.; and material 52may be formed utilizing a temperature that is at least about 500° C.greater than the temperature utilized to form material 54, and/or apressure which is at least about a factor of 50 greater than thepressure utilized to form material 52. The relatively disorderedmaterial 52 will support a portion of a transitory structure havinghigher resistance than the portion supported by the relatively orderedmaterial 54. Thus, the materials 52 and 54 together support a transitorystructure of the type shown in FIG. 5 as structure 21, with the segment22 a of such transitory structure being supported by material 54, andthe segment 24 a being supported by material 52.

The material 52 may be disordered relative to material 54 through any ofa number of physical differences between the materials 52 and 54. Forinstance, material 52 may be more amorphous than material 54 (i.e.,material 54 may have higher crystallinity than material 52); material 52may have higher disorder of vacancy arrangements then material 54; mayhave less/more defects in a lattice; and/or may have greater disorder indistribution of the lattice defects.

The physical differences between materials 52 and 54 may be generatedwith other methods either in addition to, or alternatively to, theutilization of different deposition conditions for forming materials 52and 54. For instance, in some embodiments dopant may be incorporatedinto one of the materials 52 and 54 to create a physical differencebetween materials 52 and 54. In some embodiments, the dopant may beincorporated into the material 52 that ultimately supports the higherresistance segment of a transitory structure. The dopant may be utilizedto create disorder in material 52 through generation of disorderedvacancy arrangements, creation of a disordered lattice, and/or reducingcrystallinity within material 52.

In some embodiments, dopant is incorporated into material 52 by in situincorporation of the dopant during deposition of material 52. In someembodiments, material 52 comprises metal oxide and the dopant comprisesone or more elements, other than oxygen, selected from group 16 of theperiodic table (for instance, comprises one or more of sulfur, seleniumand tellurium). Such dopant may be present in material 52 to aconcentration within a range of from about 0.5 atomic percent to about50 atomic percent, and may be substantially or entirely absent frommaterial 54 in order to create the desired physical difference betweenmaterials 52 and 54.

Referring to FIG. 13, conductive structure 3 is formed over material 54to complete fabrication of memory cell 20 a. In the shown embodiment,the conductive structure 3 has a surface 57 which is directly againstmaterial 54. The conductive structure 3 may comprise any of thematerials discussed above regarding conductive structure 1. Theconductive structures 1 and 3 may have the same composition as oneanother in some embodiments, and may have different compositions fromone another in other embodiments.

The materials 52 and 54 have a physical difference which promotesformation of a desired transitory structure as the memory cell 20 a istransitioned from a HRS mode to a LRS mode. The physical differencebetween materials 52 and 54 is present in both the HRS and LRS modes.Some prior art memory cells have physically different materials presentin either the LRS mode or the HRS mode (for instance, phase changememory cells may have a crystalline region present in combination withan amorphous region), but the physical difference is not retained inboth the LRS and HRS modes. Instead, the physical difference correspondsto a transitory structure formed in transitioning between the HRS andLRS modes. In contrast to such prior art memory cells, the memory cellof FIG. 13 has a physical difference between portions of the datastorage region 7 which is retained in both the HRS and LRS modes of thecell.

One of the materials 52 and 54 of FIG. 13 may be referred to as adisordered material and the other as an ordered material, in someembodiments. In the embodiment of FIG. 13, the disordered materialdirectly contacts a surface of one of the conductive structures 1 and 3,and the ordered material directly against a surface of the other of theconductive structures 1 and 3; and thus the embodiment of FIG. 13 isconfigured to support a transitory structure of the type shown in FIG.5. In other embodiments, the disordered material may be between a pairof ordered materials so that the memory cell is configured to support atransitory structure of the type shown in FIG. 6; and in yet otherembodiments the ordered material may be between a pair of disorderedmaterials so that the memory cell is configured to support a transitorystructure of the type shown in FIG. 7.

An example embodiment in which a disordered material is between a pairof ordered materials is shown in FIG. 14. Specifically, FIG. 14 shows aconstruction 60 comprising a data storage region 7 having a disorderedregion 62 between a pair of ordered regions 64 and 66. The regions 64and 66 may be deposited utilizing conditions analogous to thosedescribed above with reference to FIG. 12 for deposition of material 54,and the disordered region 62 may be deposited utilizing conditionsanalogous to those discussed above with reference to FIG. 11 fordeposition of material 52.

In some embodiments, the regions 62, 64 and 66 may consist of the samecomposition as one another, but differ from one another in physicalproperties so that regions 64 and 66 have more order than region 62. Forinstance, in some embodiments the entire thickness of data storageregion 7 may comprise a metal oxide composition, with region 62 havinglower density and/or lower crystallinity relative to regions 64 and 66.The regions 64 and 66 may comprise about the same amount of order as oneanother, or may differ from one another in the relative amount of order.In some embodiments, region 62 may have a higher concentration of dopantthan regions 64 and 66. For instance, region 62 may be deposited whileincorporating dopant into such region through in situ dopantincorporation methodologies. The region 62 may have a dopantconcentration within a range of from about 0.5 atomic percent to about50 atomic percent; and the dopant may be substantially or entirelyabsent from regions 64 and 66 in order to create the desired differencesin disorder of region 62 relative to regions 64 and 66. In someembodiments, the regions 64 and 66 may have similar dopant concentrationto another (which can include embodiments in which regions 64 and 66have essentially no dopant concentration), and in other embodimentsregions 64 and 66 may have a different dopant concentration relative toone another.

The construction 60 of FIG. 14 may be utilized to support a transitorystructure of the type described with reference to FIG. 6; with lowerresistance segments 30 and 22 b of the transitory structure beingsupported by the ordered regions 64 and 66, and with the higherresistance segment 24 b of the transitory structure being supported bythe disordered region 62.

In some embodiments, the data storage region 7 may have a thicknessbetween conductive structures 1 and 3 within a range of from about 5nanometers to about 20 nanometers; and regions 64 and 66 may each havethicknesses of less than or equal to about 4 nanometers.

An example embodiment in which an ordered material is between a pair ofdisordered materials is shown in FIG. 15. Specifically, FIG. 15 shows aconstruction 70 comprising a data storage region 7 having an orderedregion 72 between a pair of disordered regions 74 and 76. The disorderedregions 74 and 76 may be deposited utilizing conditions analogous tothose described above with reference to FIG. 11 for deposition ofmaterial 52, and the ordered region 72 may be deposited utilizingconditions analogous to those discussed above with reference to FIG. 12for deposition of material 54.

In some embodiments, the regions 72, 74 and 76 may consist of the samecomposition as one another, but differ from one another in physicalproperties so that regions 74 and 76 have less order than region 72. Forinstance, in some embodiments the entire thickness of data storageregion 7 may comprise a metal oxide composition, with region 72 havinghigher density, higher crystallinity and/or different order relative toregions 74 and 76. The regions 74 and 76 may comprise the same amount ofdisorder as one another, or may differ from one another in the relativeamount of disorder. In some embodiments, regions 74 and 76 may have ahigher concentration of dopant than region 72. For instance, regions 74and 76 may be deposited while incorporating dopant into such regionsthrough in situ dopant incorporation methodologies. The regions 74 and76 may have dopant concentrations within a range of from about 0.5atomic percent to about 50 atomic percent; and the dopant may besubstantially or entirely absent from region 72 in order to create thedesired differences in disorder of region 72 relative to regions 74 and76. In some embodiments, the regions 74 and 76 may have similar dopantconcentration to another, and in other embodiments regions 74 and 76 mayhave a different dopant concentration relative to one another.

The construction 70 of FIG. 15 may be utilized to support a transitorystructure of the type described with reference to FIG. 7; with higherresistance segments 24 c and 32 of the transitory structure beingsupported by the disordered regions 74 and 76, and with the lowerresistance segment 22 c of the transitory structure being supported bythe ordered region 72.

In some embodiments, the data storage region 7 may have a thicknessbetween conductive structures 1 and 3 within a range of from about 5nanometers to about 20 nanometers; and region 72 may have a thickness ofless than or equal to about 4 nanometers.

Although the constructions of FIGS. 13-15 are described as supportingcells of the types described in FIGS. 5-7, respectively; in otherembodiments the constructions may support cells of the types describedin FIGS. 8-10. For instance, if the transitions between adjacentmaterials of the data storage regions are graduated rather than abrupt,the constructions may be more likely to support cells of the typesdescribed in FIGS. 8-10 rather than cells of the types described inFIGS. 5-7.

In some embodiments, the incorporation of higher resistance segments oftransitory structures into memory cells, as discussed above withreference to FIGS. 5-15, may enable development of memory cell arrays inwhich the individual memory cells are not paired with select devices.Instead, the memory cells will have sufficient resistance to enableleakage to be sufficiently controlled without utilization of selectdevices. In other embodiments, the memory cells of the types describedabove with reference to FIGS. 5-15 may be incorporated into conventionalmemory array architectures utilizing conventional select devices.

The illustrated memory cells may be incorporated into integrated memoryarrays. In such embodiments, one of the conductive structures 1 and 3may along a first access/sense line, and the other of the conductivestructures may be along a second access/sense line; and the memory cellmay be uniquely addressed in the array through the combination of thefirst and second access/sense lines.

The memory cells and arrays discussed above may be incorporated intoelectronic systems. Such electronic systems may be used in, for example,memory modules, device drivers, power modules, communication modems,processor modules, and application-specific modules, and may includemultilayer, multichip modules. The electronic systems may be any of abroad range of systems, such as, for example, clocks, televisions, cellphones, personal computers, automobiles, industrial control systems,aircraft, etc.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. The descriptionprovided herein, and the claims that follow, pertain to any structuresthat have the described relationships between various features,regardless of whether the structures are in the particular orientationof the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections in order to simplifythe drawings.

When a structure is referred to above as being “on” or “against” anotherstructure, it can be directly on the other structure or interveningstructures may also be present. In contrast, when a structure isreferred to as being “directly on” or “directly against” anotherstructure, there are no intervening structures present. When a structureis referred to as being “connected” or “coupled” to another structure,it can be directly connected or coupled to the other structure, orintervening structures may be present. In contrast, when a structure isreferred to as being “directly connected” or “directly coupled” toanother structure, there are no intervening structures present.

In some embodiments, the invention includes a memory cell. The memorycell comprises a data storage region between a pair of conductivestructures. The data storage region is configured to support atransitory structure which alters resistance through the memory cell.The data storage region comprises two or more portions, with one of theportions supporting a higher resistance segment of the transitorystructure, and another of the portions supporting a lower resistancesegment of the transitory structure.

In some embodiments, the invention includes a method of forming a memorycell. A data storage region is formed over a first conductive structure,and a second conductive structure is formed over the data storageregion. The data storage region is configured to support a transitorystructure which alters resistance through the memory cell. The datastorage region comprises two or more portions which are physicallydifferent from one another so that one of the portions supports a higherresistance segment of the transitory structure, and another of theportions supports a lower resistance segment of the transitorystructure. The physical difference is present prior to formation of thetransitory structure.

In some embodiments, the invention includes a method of forming a memorycell. A first oxide region is deposited over a first conductivestructure, a second oxide region is deposited over the first oxideregion, and a second conductive structure is formed over the secondoxide region. The first and second oxide regions are together comprisedby a data storage region configured to support a transitory structurewhich alters resistance through the memory cell. The first oxide regionis different from one the second oxide region so that one of the oxideregions supports a higher resistance segment of the transitory structurethan the other of the oxide regions.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1-15. (canceled)
 16. A method of forming a memory cell, comprising:forming a data storage region over a first conductive structure; forminga second conductive structure over the data storage region; wherein thedata storage region is configured to support a transitory structurewhich alters resistance through the memory cell; and wherein the datastorage region comprises two or more portions which are physicallydifferent from one another so that one of the portions supports a higherresistance segment of said transitory structure and another of theportions supports a lower resistance segment of said transitorystructure; the physical difference being present prior to formation ofthe transitory structure.
 17. The method of claim 16 wherein the datastorage region comprises one or more metal oxides.
 18. The method ofclaim 16 wherein the lower resistance segment is directly against one ofthe conductive structures.
 19. The method of claim 16 wherein the lowerresistance segment is not directly against either of the conductivestructures.
 20. The method of claim 16 wherein the memory cell is formedto have multiple portions of the data storage region which supportmultiple lower resistance segments of said transitory structure.
 21. Themethod of claim 20 wherein the lower resistance segments have about thesame resistance as one another.
 22. The method of claim 20 wherein atleast one of the lower resistance segments has a substantially differentresistance than another of the lower resistance segments.
 23. The methodof claim 16 wherein the memory cell is formed to have multiple portionsof the data storage region which support multiple higher resistancesegments of said transitory structure.
 24. The method of claim 23wherein the higher resistance segments have about the same resistance asone another.
 25. The method of claim 23 wherein at least one of thehigher resistance segments has a substantially different resistance thananother of the higher resistance segments.
 26. The method of claim 16wherein the physical difference is a difference in density inducedutilizing different deposition conditions for the one of the portionsrelative to another of the portions.
 27. The method of claim 16 whereinthe physical difference is a difference in crystallinity inducedutilizing different deposition conditions for the one of the portionsrelative to another of the portions.
 28. The method of claim 16 whereinthe physical difference is a difference in crystallinity induced byproviding different concentrations of dopant in one of the portionsrelative to another of the portions.
 29. The method of claim 16 whereinthe physical difference is a difference in dopant concentration in oneof the portions relative to another of the portions.
 30. A method offorming a memory cell, comprising: depositing a first oxide region overa first conductive structure; depositing a second oxide region over thefirst oxide region; forming a second conductive structure over thesecond oxide region; the first and second oxide regions together beingcomprised by a data storage region configured to support a transitorystructure which alters resistance through the memory cell; and whereinthe first oxide region is different from one the second oxide region sothat one of the oxide regions supports a higher resistance segment ofsaid transitory structure than the other of the oxide regions.
 31. Themethod of claim 30 wherein the difference between the first and secondoxide regions is a difference in crystallinity; and wherein saiddifference is imparted by: depositing the first oxide region under firstconditions utilizing a first temperature and a first pressure; anddepositing the second oxide region under second conditions utilizing asecond temperature and a second pressure; with the second temperatebeing different from the first temperature and/or with the secondpressure being different from the first pressure.
 32. The method ofclaim 30 wherein the difference between the first and second oxideregions is a difference in density; and wherein said difference isimparted by: depositing the first oxide region under first conditionsutilizing a first temperature and a first pressure; and depositing thesecond oxide region under second conditions utilizing a secondtemperature and a second pressure; with the second temperate beingdifferent from the first temperature and/or with the second pressurebeing different from the first pressure.
 33. The method of claim 30wherein the difference between the first and second oxide regions is adifference in dopant concentration.
 34. The method of claim 33 whereinthe dopant is incorporated into one of the first and second oxideregions by in situ incorporation of the dopant into said one of theregions during the deposition of said one of the regions.
 35. The methodof claim 34 wherein the dopant is incorporated into said one of theregions to a concentration within a range of from about 0.5 atomicpercent to about 50 atomic percent.
 36. The method of claim 34 whereinthe dopant comprises one or more elements, other than oxygen, selectedfrom the group consisting of group 16 of the periodic table.
 37. Themethod of claim 16 wherein the transitory structure is a filament. 38.The method of claim 30 wherein the transitory structure is a filament.